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TSF30L60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF30L60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Halogen-free according to IEC 61249-2-21 definition Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 Nm max. VRRM V dV/dt V/μs TJ = 25°C TJ = 125°C TJ = 25°C μA TJ = 125°C mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D1412004 Version: E14 IF = 15A 10000 A Taiwan Semiconductor TYPICAL APPLICATIONS MECHANICAL DATA IR 180 Maximum repetitive peak reverse voltage Maximum average forward rectified current VF Instantaneous forward voltage per diode (Note1) per diode TYP Case: ITO-220AB Polarity: As marked 30 Trench Schottky Rectifier per device - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC FEATURES Weight: 1.7 g (approximately) Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. PARAMETER - 55 to +150 45 UNIT 15 ITO-220AB - 55 to +150 0.62 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TSF30L45C TSF30L60C 0.55 60 MAX 0.58 IF(AV) 0.48 0.55 0.51 SYMBOL Storage temperature range 0.46 Voltage rate of change (Rated VR) TYP 4 MAX Operating junction temperature range Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode 60 500 TSF30L45C thru TSF30L60C Note 1: Pulse test with pulse width = 300μs, 1% duty cycle Instantaneous reverse current per diode at rated reverse voltage IFSM A V 0.53 Typical thermal resistance per diode |
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