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TSF30L60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSF30L60C
Description  Trench Schottky Rectifier
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSF30L60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Mounting torque: 0.56 Nm max.
VRRM
V
dV/dt
V/μs
TJ = 25°C
TJ = 125°C
TJ = 25°C
μA
TJ = 125°C
mA
RθJC
°C/W
TJ
°C
TSTG
°C
Document Number: DS_D1412004
Version: E14
IF = 15A
10000
A
Taiwan Semiconductor
TYPICAL APPLICATIONS
MECHANICAL DATA
IR
180
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
VF
Instantaneous forward
voltage per diode (Note1)
per diode
TYP
Case:
ITO-220AB
Polarity:
As marked
30
Trench Schottky Rectifier
per device
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
FEATURES
Weight:
1.7 g (approximately)
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
PARAMETER
- 55 to +150
45
UNIT
15
ITO-220AB
- 55 to +150
0.62
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSF30L45C
TSF30L60C
0.55
60
MAX
0.58
IF(AV)
0.48
0.55
0.51
SYMBOL
Storage temperature range
0.46
Voltage rate of change (Rated VR)
TYP
4
MAX
Operating junction temperature range
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
60
500
TSF30L45C thru TSF30L60C
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
IFSM
A
V
0.53
Typical thermal resistance per diode


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