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TSF20U60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF20U60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page creat by ART - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test SYMBOL UNIT VRRM V dV/dt V/μs IF = 10A IF = 20A IF = 10A IF = 20A TJ = 25°C μA TJ = 125°C mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D1412003 Version: G14 Maximum instantaneous forward voltage per diode ( Note 1 ) Taiwan Semiconductor A - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC per device Case: ITO-220AB ITO-220AB TYPICAL APPLICATIONS TJ = 25°C 0.54 Polarity: As marked MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 200 VF PARAMETER 0.60 MECHANICAL DATA Trench Schottky Rectifier 0.61 - Halogen-free according to IEC 61249-2-21 definition FEATURES Maximum repetitive peak reverse voltage Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. TSF20U60C 45 Molding compound meets UL 94 V-0 flammability rating TSF20U45C IFSM Mounting torque: 0.56 Nm max. Weight: 1.7g (approximately) Voltage rate of change (rated VR) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 10000 180 per diode Maximum average forward rectified current A IF(AV) V Note 1: Pulse test with pulse width = 300μs, 1% duty cycle Typical thermal resistance per diode Storage temperature range 60 Maximum instantaneous reverse current per diode at rated reverse voltage IR Operating junction temperature range TJ = 125°C - 55 to +150 - 55 to +150 0.55 300 0.44 0.63 34 60 TSF20U45C thru TSF20U60C 0.53 0.48 20 10 |
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