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TSF20L60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF20L60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page creat by ART - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test SYMBOL UNIT VRRM V dV/dt V/μs IF = 10A IF = 20A IF = 10A IF = 20A TJ = 25°C μA TJ = 125°C mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D1412005 Taiwan Semiconductor A IF(AV) Trench Schottky Rectifier Voltage rate of change (rated VR) Molding compound meets UL 94 V-0 flammability rating Maximum repetitive peak reverse voltage Maximum average forward rectified current PARAMETER TSF20L45C thru TSF20L60C 10 45 0.77 0.81 A 0.66 0.70 0.55 20 Storage temperature range - 55 to +150 Typical thermal resistance per diode Maximum instantaneous reverse current per diode at rated reverse voltage 4 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) IFSM TSF20L45C TSF20L60C 60 ITO-220AB - 55 to +150 10000 100 FEATURES - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: ITO-220AB TJ = 125°C VF 0.57 IR TYP TYP MAX 0.79 0.68 MAX 0.64 Version: B14 Note 1: Pulse test with pulse width = 300μs, 1% duty cycle Operating junction temperature range Instantaneous forward voltage per diode (Note1) TJ = 25°C 0.53 0.70 500 V 0.65 0.63 0.79 120 Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately) per device per diode 0.55 0.72 |
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