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TSF10U60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF10U60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ high efficiency - High forward surge capability Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test SYMBOL UNIT VRRM V dV/dt V/μs VAC V V IF = 5A IF = 10A IF = 5A TJ = 125°C TJ = 25°C μA TJ = 125°C mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D1411033 Version: E14 0.48 Maximum instantaneous forward voltage per diode (Note1) - Halogen-free according to IEC 61249-2-21 definition 5 Maximum average forward rectified current Storage temperature range - 55 to +150 Voltage rate of change (rated VR) 10000 - 4 100 - 55 to +150 IR Taiwan Semiconductor FEATURES - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA 10 Trench Schottky Rectifier A Maximum repetitive peak reverse voltage TSF10U60C per device Note 1: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle 0.62 2000 0.42 - 150 MAX. Operating junction temperature range - 0.44 TSF10U60C TJ = 25°C 0.54 PARAMETER Min. TYP. V - Case: ITO-220AB Mounting torque: 0.56 Nm max. Weight: 1.7g (approximately) Maximum instantaneous reverse current per diode at rated reverse voltage 60 Polarity: As marked ITO-220AB Typical thermal resistance per diode VF 500 60 - - 0.39 - IFSM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) - - per diode IF(AV) Isolation voltage from terminal to heatsink t = 1 min A Breakdown voltage ( IR =1.0mA, Ta =25°C ) VBR Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode |
Similar Part No. - TSF10U60C_14 |
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Similar Description - TSF10U60C_14 |
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