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TSD20H200CW Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSD20H200CW
Description  Trench Schottky Rectifier
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSD20H200CW Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
V
dV/dt
V/μs
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
IF = 5A
0.57
-
0.62
-
0.72
-
0.77
-
IF = 10A
0.67
0.79
0.78
0.87
0.81
0.90
0.83
0.93
IF = 5A
0.50
-
0.53
-
0.58
-
0.62
-
IF = 10A
0.59
0.68
0.63
0.72
0.66
0.75
0.68
0.78
TJ = 25°C
-
200
-
200
-
100
-
100
μA
TJ = 125°C
825825315315
mA
RθJC
°C/W
RθJL
°C/W
TJ
°C
TSTG
°C
Document Number: DS_D1411067
Version: C15
Instantaneous forward
voltage per diode
(Note1)
150
TSD20H100CW - TSD20H200CW
Weight:
1.6 g (approximately)
PARAMETER
SYMBOL
Taiwan Semiconductor
TSD20H
200CW
200
UNIT
TYPICAL APPLICATIONS
MECHANICAL DATA
Case:
TO-263AB (D
2PAK)
- 55 to +150
- 55 to +150
2.8
IR
TJ = 125°C
10
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Trench Schottky barrier rectifier are designed for high
frequency miniature switched mode power supplies such as
adapters, lighting and on-board DC/DC converters.
per diode
Polarity:
As marked
TSD20H
120CW
TSD20H
150CW
100
120
A
TSD20H
100CW
TJ = 25°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
150
20
10000
Maximum average
forward rectified current
per device
IF(AV)
VF
Trench Schottky Rectifier
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Maximum repetitive peak reverse voltage
TO-263AB (D
2PAK)
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
IFSM
A
V
Typical thermal resistance per diode
3.8
Operating junction temperature range
Voltage rate of change (Rated VR)
1
3
2


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