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VBT6045C-M3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VBT6045C-M3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page VBT6045C-M3 www.vishay.com Vishay General Semiconductor Revision: 30-Apr-13 2 Document Number: 87959 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode IF = 10 A TA = 25 °C VF (1) 0.44 - V IF = 15 A 0.47 - IF = 30 A 0.54 0.64 IF = 10 A TA = 125 °C 0.33 - IF = 15 A 0.37 - IF = 30 A 0.47 0.56 Reverse current per diode VR = 45 V TA = 25 °C IR (2) -3000 μA TA = 125 °C 18 50 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT64045C UNIT Typical thermal resistance per diode RJC 1.5 °C/W per device 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT6045C-M3/4W 1.38 4W 50/tube Tube TO-263AB VBT6045C-M3/8W 1.38 8W 800/reel Tape and reel Case Temperature (°C) 70 60 50 40 10 0 100 110 120 130 140 150 30 20 0 2 12 14 16 20 0 5 15 30 35 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 20 D = t p/T t p T 6 8 10 4 25 10 18 |
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