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SRAS2060RN Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SRAS2060RN Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  CREAT BY ART - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM 20 30 40 50 60 90 100 150 V VRMS 14 21 28 35 42 63 70 105 V VDC 20 30 40 50 60 90 100 150 V IF(AV) A RθJC OC/W TJ OC TSTG OC Document Number: DS_D1310002 Version: K13 15 10 - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle Typical thermal resistance 1.5 Operating junction temperature range Maximum reverse current @ rated VR TJ=25 ℃ TJ=100 ℃ TJ=125 ℃ IR mA - -5 0.5 0.1 A Maximum instantaneous forward voltage (Note 1) IF= 20 A VF 0.57 0.70 V 0.92 1.02 Maximum DC blocking voltage Maximum average forward rectified current 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 330 SRAS 2090 SRAS 20100 SRAS 20150 Unit Maximum repetitive peak reverse voltage Maximum RMS voltage Polarity: As marked Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL SRAS 2020 SRAS 2030 SRAS 2040 SRAS 2050 SRAS 2060 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: TO-263AB (D 2PAK) TO-263AB (D 2PAK) SRAS2020 thru SRAS20150 Taiwan Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES - Moisture sensitivity level: level 1, per J-STD-020 |
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