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SD103AW Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SD103AW Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  Small Signal Product - Low power loss, high current capability, low VF - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix "G" means green compound (halogen-free) - Case: SOD-123 small outline plastic package - Molding compound, UL flammability classification rating 94V-0 - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) SYMBOL UNIT PD mW VRRM V VR V IO mA IFRM A RθJA oC/W TJ oC TSTG oC SYMBOL Units Junction Capacitance CJ pF Document Number: DS_S1411004 Version: C14 SD103AW thru SD103CW Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES SOD-123 MECHANICAL DATA - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guar - High temperature soldering guaranteed : 260°C/10s MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SD103AW SD103BW SD103CW 50 30 20 Reverse Leakage Current 5 μA Reverse Breakdown Voltage PARAMETER TYP MAX 125 300 1.5 350 28 21 14 40 400 Mean Forward Current @ TL = 100°C Reverse Voltage Repetitive Peak Reverse Voltage Power Dissipation V 0.37 V 0.60 40 @ t ≦ 1.0 s Storage Temperature Range Junction Temperature Thermal Resistance ( Junction to Ambient ) -65 to +125 - - 20 30 V(BR) VF IR VR = 0 , f = 1.0 MHz SD103CW VR = 10 V SD103BW VR = 20 V SD103AW VR = 30 V IF = 200 mA IF = 20 mA Forward Voltage - -- - Repetitive Peak Forward Surge Current MIN SD103CW IR = 10 μA SD103BW IR = 10 μA SD103AW IR = 10 μA |
Similar Part No. - SD103AW |
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Similar Description - SD103AW |
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