VT5200 datasheet(1/5 Pages) VISHAY

Part #	VT5200

Description	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

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Manufacturer	VISHAY [Vishay Siliconix]

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VT5200, VFT5200, VBT5200, VIT5200

www.vishay.com

Vishay General Semiconductor

Revision: 14-Aug-13

1

Document Number: 89176

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.58 V at IF = 2.5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 275 °C max. 10 s, per JESD 22-B106

(for TO-220AC, ITO-220AC and TO-262AA package)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB and TO-262AA



Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs max.



PRIMARY CHARACTERISTICS

IF(AV)

5.0 A

VRRM

200 V

IFSM

80 A

VF at IF = 5.0 A

0.65 V

TJ max.

150 °C

Package

TO-220AC, ITO-220AC,

TO-263AB, TO-262AA

Diode variation

Single

TMBS

®

NC

K

A

NC

A

K

PIN 1

CASE

PIN 2

PIN 1

PIN 2

TO-220AC

TO-263AB

TO-262AA

ITO-220AC

VT5200

VFT5200

VIT5200

VBT5200

K

HEATSINK

A

NC

A

K

HEATSINK

1

2

1

2

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT5200

VFT5200

VBT5200

VIT5200

UNIT

Max. repetitive peak reverse voltage

VRRM

200

V

Max. average forward rectified current (fig. 1)

IF(AV)

5.0

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

IFSM

80

A

Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH

EAS

30

mJ

Peak repetitive reverse current



at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C

IRRM

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Isolation voltage (ITO-220AC only)



from terminal to heatsink t = 1 min

VAC

1500

V

Operating junction and storage temperature range

TJ, TSTG

- 40 to + 150

°C

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