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MBR10100 Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR10100 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor Document Number: 89034 Revision: 27-Aug-07 www.vishay.com 1 High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 seconds (for TO-220AC and ITO-220AC package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C CASE PIN 2 PIN 1 MBR1090 MBR10100 MBRB1090 MBRB10100 PIN 1 PIN 2 K HEATSINK 1 2 1 2 K 1 2 MBRF1090 MBRF10100 PIN 2 PIN 1 TO-263AB TO-220AC ITO-220AC TMBS® MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse current at tp = 2 µs, 1 kHz IRRM 0.5 A Voltage rate of change (rated VR) dv/dt 10000 V/µs Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C Isolation voltage (ITO-220AC only) From terminal to heatsink t = 1 minute VAC 1500 V |
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