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MF3060C Datasheet(PDF) 2 Page - Vishay Siliconix |
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MF3060C Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page M3060C, MF3060C, MI3060C www.vishay.com Vishay General Semiconductor Revision: 13-Aug-13 2 Document Number: 89009 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT Instantaneous forward voltage per diode VF (1) IF = 5.0 A TJ = 25 °C 0.482 - V IF = 7.5 A 0.520 - IF = 15 A 0.614 0.72 IF = 5.0 A TJ = 125 °C 0.387 - IF = 7.5 A 0.443 - IF = 15 A 0.547 0.62 Reverse current per diode IR (2) rated VR TJ = 25 °C 50 350 μA TJ = 125 °C 23 45 mA Typical junction capacitance per diode CJ 4.0 V, 1 MHz TJ = 25 °C 540 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL M3060C MF3060C MI3060C UNIT Thermal resistance per diode RJC 2.0 5.5 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB M3060C-E3/4W 1.85 4W 50/tube Tube ITO-220AB MF3060C-E3/4W 1.75 4W 50/tube Tube TO-262AA MI3060C-E3/4W 1.46 4W 50/tube Tube 0 6 12 18 24 30 0 50 100 150 Case Temperature (°C) Resistive or Inductive Load MF3060C M(I)3060C 0 3 2 1 5 4 6 8 9 7 10 11 04 28 612 10 14 16 18 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 D = t p/T t p T |
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