VS-MBR350 (-M3), VS-MBR360 (-M3)

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Vishay Semiconductors

Revision: 13-Oct-11

1

Document Number: 93450

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Schottky Rectifier, 3 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

• Designed and qualified for commercial level

• Material categorization: For definitions of compliance

DESCRIPTION

The VS-MBR350..., VS-MBR360... axial leaded Schottky

rectifier has been optimized for very low forward voltage

drop, with moderate leakage. Typical applications are in

switching power supplies, converters, freewheeling diodes,

and reverse battery protection.

PRODUCT SUMMARY

Package

DO-201AD (C-16)

3 A

50 V, 60 V

0.64 V

15 mA at 125 °C

150 °C

Diode variation

Single die

5.0 mJ

Cathode

Anode

C-16

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

3.0

A

50/60

V

460

A

0.73

V

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBR350

VS-MBR350-M3

VS-MBR360

VS-MBR360-M3

UNITS

Maximum DC reverse voltage

50

50

60

60

V

Maximum working peak

reverse voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

3.0

A

Maximum peak one cycle

non-repetitive surge current

See fig. 6

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

460

10 ms sine or 6 ms rect. pulse

80

Non-repetitive avalanche energy

5.0

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs

1.0

A