F00129H_15 datasheet(2/3 Pages) SSDI

Part #	F00129H

Description	Avalanche Rated N-channel MOSFET

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Manufacturer	SSDI [Solid States Devices, Inc]

Direct Link	http://www.ssdi-power.com

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2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00129H

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF80N20 Series

Electrical Characteristics5/

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

VGS = 0V, ID = 250μA

BVDSS

200

220

––

V

Drain to Source On State

Resistance

VGS = 10V, ID = 48A, Tj= 25

oC

VGS = 10V, ID = 48A, Tj=125

oC

VGS = 10V, ID = 48A, Tj= 175

oC

RDS(on)

––

25

50

65

30

65

––

mΩ

Gate Threshold Voltage

VDS = VGS, ID = 4.0mA, Tj= 25

oC

VDS = VGS, ID = 4.0mA, Tj= 125

oC

VDS = VGS, ID = 4.0mA, Tj= -55

oC

VGS(th)

2.5

1.5

––

4.5

3.6

5

5.0

––

6

V

Gate to Source Leakage

VGS = ±20V, Tj= 25

oC

VGS = ±20V, Tj= 125

oC

IGSS

––

10

30

±100

––

nA

Zero Gate Voltage Drain Current

VDS = 200V, VGS = 0V, Tj = 25

oC

VDS = 200V, VGS = 0V, Tj = 125

oC

VDS = 200V, VGS = 0V, Tj = 150

oC

IDSS

––

0.01

2.5

25

150

––

μA

Forward Transconductance

VDS = 10V, ID = 48A, Tj = 25

oC

gfs

25

50

––

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10V

VDS = 100V

ID = 48A

Qg

Qgs

Qgd

––

150

45

75

250

65

120

nC

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VGS = 10V

VDS = 100V

ID = 48A

RG = 4.0Ω, pw= 3us

td(on)

tr

td(off)

tf

––

50

110

50

75

135

75

nsec

Diode Forward Voltage

IF = 48A, VGS = 0V

VSD

––

0.90

1.5

V

Diode Reverse Recovery Time

Reverse Recovery Charge

IF = 10A, di/dt = 100A/usec

IF = 25A, di/dt = 100A/usec

trr1

Irm1

Qrr1

trr2

Irm2

Qrr2

––

190

11

1

310

17

2.5

250

––

nsec

A

μC

nsec

A

μC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

Ciss

Coss

Crss

––

5300

1050

175

––

pF

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