VS-10TQ035SPbF, VS-10TQ045SPbF

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Vishay Semiconductors

Revision: 21-May-14

2

Document Number: 94121

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop



See fig. 1

10 A

0.57

V

20 A

0.67

10 A

0.49

20 A

0.61

Maximum reverse leakage current



See fig. 2

2

mA

15

Maximum junction capacitance

900

pF

Typical series inductance

Measured lead to lead 5 mm from package body

8.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

-55 to +175

°C

Maximum thermal resistance,



junction to case

DC operation



See fig. 4

2.0

°C/W

Typical thermal resistance,



case to heatsink

Mounting surface, smooth and greased

0.50

Approximate weight

2g

0.07

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

10TQ045S