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F1T1 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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F1T1 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A Trr 250 ns Cj pF RθJA OC/W TJ OC TSTG OC Document Number: DS_D1402003 Version: F14 Note 1: Pulse test with PW=300 μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Maximum reverse recovery time (Note 2) 150 500 Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Typical thermal resistance 100 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 5 μA 150 Typical junction capacitance (Note 3) 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum instantaneous forward voltage (Note 1) @ 1 A VF 1.2 V UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL F1T1 F1T2 F1T3 F1T4 F1T5 F1T6 F1T7 MECHANICAL DATA Case: TS-1 TS-1 Weight: 0.2g (approximately) F1T1 thru F1T7 Taiwan Semiconductor Fast Recovery Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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