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PM0020 Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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PM0020 Datasheet(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet FEATURES: • Power Dissipation 1 kW @ 25oC Case • Extremely Large SOA • Ultra Fast Switching, ts = 100 ns typical (Outperforms IGBT) • OFHC Copper Package • Ideal for Motor Control/Power Systems • Extremely Low RθJC: 0.1oC/W • Can Be Driven From Low Level Logic • Higher Current and Voltages Available. Consult Factory • Alternate Packages Available. Consult Factory. • TX, TX-V, and S-Level Screening Available. Consult Factory. SHA489 IGBT REPLACEMENT ULTRA FAST SWITCHING DEVICE 200 Amps 250 Volts 1000 Watts MAXIMUM RATINGS Symbol Value Units Output Voltage (Collector – Emitter) V3-1 250 V Out/In Isolation (Collector – Gate) V3-2 250 V Input Voltage (Gate – Emitter) V2-1 ±20 V Current Sink Capabilities (peak) I3 200 A Input Current (transistor switched off)* I2 -5 A Total Device Power Dissipation @ TC = 25ºC Derate above 75ºC PD 1000 8 W W/ºC Storage Temperature Tstg -55 to +150oC ºC THERMAL CHARACTERISTICS Symbol Value Units Thermal Resistance (Junction – Case) Power Section RθJC 0.1 ºC/W ELECTRICAL CHARACTERISTICS Symbol Min Max Units Output Breakdown (Collector – Emitter) (I3 = 10 mA, V2-1 = -4 V) BV3-1 250 –– Volts Out/In Isolation (Collector – Gate) (I3 = 300 µA, I1 = 0 V) BV3-2 250 –– Volts Input Breakdown Voltage (I1 = -100 µA, I3 = 0 V) (I1 = 100 µA, I3 = 0 V) BV2-1 19 -8 22 –– Volts Output Leakage Current (V2-1 = -4 V, V3-1 ≤ 250 V) I3 –– 5 mA NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0020A DOC |
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Similar Description - PM0020_15 |
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