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1N5408G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N5408G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A Cj pF TJ OC TSTG OC Note1: Pulse Test with PW=300μs, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1405021 Version: H14 SYMBOL 1N5400G thru 1N5408G Taiwan Semiconductor Glass Passivated Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC UNIT Maximum repetitive peak reverse voltage 1.0 OC/W MECHANICAL DATA Case: DO-201AD DO-201AD Weight: 1.2 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A Maximum instantaneous forward voltage (Note 1) @ 3 A VF V Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 5 μA 100 Typical junction capacitance (Note 2) 25 Operating junction temperature range - 55 to +150 Typical thermal resistance RθjC RθjA 15 45 Storage temperature range - 55 to +150 1N 5400G 1N 5401G 1N 5402G 1N 5404G 1N 5406G 1N 5407G 1N 5408G 1.1 |
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