VS-20L15TSPbF

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Vishay Semiconductors

Revision: 24-Jul-14

2

Document Number: 94166

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Forward voltage drop



See fig. 1

19 A

-0.41

V

40 A

-

0.52

19 A

0.25

0.33

40 A

0.37

0.50

Reverse leakage current



See fig. 2

-10

mA

-

600

Threshold voltage

0.182

V

Forward slope resistance

7.6

m



Maximum junction capacitance

-

2000

pF

Typical series inductance

Measured lead to lead 5 mm from package body

8

-

nH

Maximum voltage rate of change

dV/dt

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction



temperature range

-55 to +125

°C

Maximum storage



temperature range

-55 to +150

Maximum thermal resistance,



junction to case

DC operation



See fig. 4

1.5

°C/W

Typical thermal resistance,



case to heatsink

Mounting surface, smooth and greased



(For TO-220)

0.50

Maximum thermal resistance,



junction to ambient

DC operation

40

Approximate weight

2g

0.07

oz.

Mounting torque

minimum

Non-lubricated threads

6 (5)

kgf

cm

(lbf

in)

maximum

12 (10)

Marking device

20L15TS