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LTC3406AB-2 Datasheet(PDF) 10 Page - Linear Technology |
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LTC3406AB-2 Datasheet(HTML) 10 Page - Linear Technology |
10 / 16 page LTC3406AB-2 10 3406ab2f Although all dissipative elements in the circuit produce losses, two main sources usually account for most of the losses in LTC3406AB-2 circuits: VIN quiescent current and I2R losses. The VIN quiescent current loss dominates the efficiency loss at very low load currents whereas the I2R loss dominates the efficiency loss at medium to high load currents. In a typical efficiency plot, the efficiency curve at very low load currents can be misleading since the actual power lost is of no consequence as illustrated in Figure 2. 2. I2R losses are calculated from the resistances of the internal switches, RSW, and external inductor RL. In continuous mode, the average output current flowing through inductor L is “chopped” between the main switch and the synchronous switch. Thus, the series resistance looking into the SW pin is a function of both top and bottom MOSFET RDS(ON) and the duty cycle (DC) as follows: RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 – DC) The RDS(ON)forboththetopandbottomMOSFETscanbe obtained from the Typical Performance Characteristics curves. Thus, to obtain I2R losses, simply add RSW to RL and multiply the result by the square of the average output current. Other losses including CIN and COUT ESR dissipative losses and inductor core losses generally account for less than 2% total additional loss. Thermal Considerations In most applications the LTC3406AB-2 does not dissipate much heat due to its high efficiency. But, in applications where the LTC3406AB-2 is running at high ambient tem- perature with low supply voltage and high duty cycles, such as in dropout, the heat dissipated may exceed the maximum junction temperature of the part. If the junction temperature reaches approximately 150°C, both power switches will be turned off and the SW node will become high impedance. To avoid the LTC3406AB-2 from exceeding the maximum junction temperature, the user will need to do some thermal analysis. The goal of the thermal analysis is to determine whether the power dissipated exceeds the maximum junction temperature of the part. The temperature rise is given by: TR = (PD)(θJA) where PD is the power dissipated by the regulator and θJA is the thermal resistance from the junction of the die to the ambient temperature. APPLICATIONS INFORMATION Figure 2. Power Loss vs Load Current 1. The VIN quiescent current is due to two components: the DC bias current as given in the electrical charac- teristics and the internal main switch and synchronous switch gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each time the gate is switched from high to low to high again, a packet of charge, dQ, moves from VIN to ground. The resulting dQ/dt is the current out of VIN that is typically larger than the DC bias current. In continuous mode, IGATECHG = f(QT + QB) where QT and QB are the gate charges of the internal top and bottom switches. Both the DC bias and gate charge losses are proportional to VIN and thus their effects will be more pronounced at higher supply voltages. OUTPUT CURRENT (mA) 0.001 0.01 0.1 1 0.1 10 100 1000 3406AB2 F02 0.0001 1 VIN = 3.6V VOUT = 1.2V VOUT = 1.8V VOUT = 2.5V |
Similar Part No. - LTC3406AB-2_15 |
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Similar Description - LTC3406AB-2_15 |
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