VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series

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Vishay Semiconductors

Revision: 30-Aug-11

2

Document Number: 94291

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

30 A

0.82

V

0.73

Maximum instantaneous reverse current

Rated DC voltage

0.2

mA

40

Threshold voltage

0.355

V

Forward slope resistance

12.3

m



Maximum junction capacitance

700

pF

Typical series inductance

Measured from top of terminal to mounting plane

8.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction temperature range

- 65 to 150

°C

Maximum storage temperature range

- 65 to 175

Maximum thermal resistance,

junction to case per leg

DC operation

1.5

°C/W

Typical thermal resistance,

case to heatsink

Mounting surface, smooth and greased

0.50

Approximate weight

2g

0.07

oz.

Mounting torque

minimum

Non-lubricated threads

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220AB

MBR2535CT

MBR2545CT