VS-63CTQ100PbF, VS-63CTQ100-N3

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Vishay Semiconductors

Revision: 29-Aug-11

1

Document Number: 94245

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Schottky Rectifier, 2 x 30 A

FEATURES

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation

for

enhanced

mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

DESCRIPTION

This center tap Schottky rectifier has been optimized for low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

Package

TO-220AB

2 x 30 A

100 V

0.69 V

20 mA at 125 °C

175 °C

Diode variation

Common cathode

11.25 mJ

Anode

13

2

Base

common

cathode

2

Common

cathode

Anode

TO-220AB

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform (per device)

60

A

100

V

60

A

1500

0.69

V

Range

- 65 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-63CTQ100PbF

VS-63CTQ100-N3

UNITS

Maximum DC reverse voltage

100

100

V

Maximum working peak reverse voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average

forward current

per leg

30

A

per device

60

Peak repetitive forward current per leg

60

Maximum peak one cycle non-repetitive

surge current per leg

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

1500

10 ms sine or 6 ms rect. pulse

300

Non-repetitive avalanche energy per leg

11.25

mJ

Repetitive avalanche current per leg

Current decaying linearly to zero in 1 μs

0.75

A