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LTC1473L Datasheet(PDF) 2 Page - Linear Technology |
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LTC1473L Datasheet(HTML) 2 Page - Linear Technology |
2 / 16 page LTC1473L 2 ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO (Note 1) ELECTRICAL CHARACTERISTICS ORDER PART NUMBER LTC1473LCGN TJMAX = 125°C, θJA = 150°C/ W Consult factory for Military and Industrial grade parts. SENSE +, SENSE –, V + .................................. – 0.3 to 10V GA1, GB1, GA2, GB2 ................................... – 0.3 to 20V SAB1, SAB2 ................................................. – 0.3 to 10V SW, VGG ...................................................... – 0.3 to 20V IN1, IN2, DIODE ...........................................– 0.3V to 7V Junction Temperature (Note 2) ............................. 125 °C Operating Temperature Range ..................... 0 °C to 70°C Storage Temperature Range ................. – 65 °C to 150°C Lead Temperature (Soldering, 10 sec).................. 300 °C GN PART MARKING 1473L SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V+ Supply Operating Range 2.8 9 V IS Supply Current VIN1 = VDIODE = 5V, VIN2 = 0V, VSENSE+ = VSENSE– = 5V q 100 200 µA VGS VGS Gate Supply Voltage VGS = VGG – V+, 2.8V ≤ V+ ≤ 10V (Note 3) q 7.5 8.5 9.5 V V +UVLO V + Undervoltage Lockout Threshold V + Ramping Down q 2.3 2.5 2.8 V V +UVLOHYS V + Undervoltage Lockout Hysteresis 70 mV VHIDIGIN Digital Input Logic High (Note 4) q 2 0.9 V VLODIGIN Digital Input Logic Low (Note 4) q 0.6 0.4 V IIN Input Current VIN1 = VIN2 = VDIODE = 5V ±1 µA VGS(ON) Gate-to-Source ON Voltage IGA1 = IGA2 = IGB1 = IGB2 = – 1µA, VSAB1 = VSAB2 = 5V q 4.5 5.6 7.0 V VGS(OFF) Gate-to-Source OFF Voltage IGA1 = IGA2 = IGB1 = IGB2 = 100µA, VSAB1 = VSAB2 = 5V q 0 0.4 V IBSENSE + SENSE + Input Bias Current VSENSE + = VSENSE– = 10V (Note 3) q 24.5 10 µA VSENSE+ = VSENSE– = 0V (Note 5) q – 300 – 175 – 75 µA IBSENSE– SENSE – Input Bias Current VSENSE+ = VSENSE– = 10V (Note 3) q 24.5 10 µA VSENSE+ = VSENSE– = 0V (Note 5) q – 300 – 175 – 75 µA VSENSE Inrush Current Limit Sense Voltage VSENSE– = 10V (VSENSE+ – VSENSE–) (Note 3) 0.15 0.20 0.25 V VSENSE– = 0V (VSENSE+ – VSENSE–) 0.10 0.20 0.30 V IPDSAB SAB1, SAB2 Pull-Down Current VIN1 = VIN2 = VDIODE = 0.4V, V + = 10V (Note 3) 5 20 35 µA VIN1 = VIN2 = 0.4V, VDIODE = 2V 30 140 300 µA ITIMER Timer Source Current VIN1 = 0.4V, VIN2 = VDIODE = 2V, VTIMER = 0V, q 369 µA VSENSE+ – VSENSE– = 300mV VTIMER Timer Latch Threshold Voltage VIN1 = 0.4V, VIN2 = VDIODE = 2V q 1.05 1.16 1.25 V tON Gate Drive Rise Time CGS = 1000pF, VSAB1 = VSAB2 = 0V (Note 6) 33 µs tOFF Gate Drive Fall Time CGS = 1000pF, VSAB1 = VSAB2 = 5V (Note 6) 2 µs tD1 Gate Drive Turn-On Delay CGS = 1000pF, VSAB1 = VSAB2 = 0V (Note 6) 22 µs tD2 Gate Drive Turn-Off Delay CGS = 1000pF, VSAB1 = VSAB2 = 5V (Note 6) 1 µs fOVGG VGS Regulator Operating Frequency 30 kHz The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Test circuit, V+ = 5V, unless otherwise specified. TOP VIEW GN PACKAGE 16-LEAD NARROW PLASTIC SSOP 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IN1 IN2 DIODE TIMER V+ VGG SW GND GA1 SAB1 GB1 SENSE+ SENSE– GA2 SAB2 GB2 |
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