LESHAN RADIO COMPANY, LTD.

S-LSI1013XT1G

SC-89

10000/Tape&Reel

ORDERING INFORMATION

Device

Shipping

3000/Tape&Reel

LSI1013XT1G

LSI1013XT3G

Marking

MARKING DIAGRAM

B = Specific Device Code

M = Month Code

B

1

3

2

(Top View)

Drain

Gate

3

1

2

Source

B

B

FEATURES

D TrenchFETr Power MOSFET: 1.8-V Rated

D Gate-Source ESD Protected: 2000 V

D High-Side Switching

D Low On-Resistance: 1.2 W

D Low Threshold: 0.8 V (typ)

D Fast Switching Speed: 14 ns

BENEFITS

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Low Battery Voltage Operation

APPLICATIONS

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories

D Battery Operated Systems

D Power Supply Converter Circuits

D Load/Power Switching Cell Phones, Pagers

P-Channel 1.8-V (G-S) MOSFET

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

"6

V

-400

-350

-300

-275

mA

-1000

mA

-275

-250

175

150

90

80

mW

275

250

mW

160

140

Operating Junction and Storage Temperature Range

−55 to 150

_C

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

V

Notes

d.

Pulse width limited by maximum junction temperature.

e.

Surface Mounted on FR4 Board.

Rev .O 1/6

D S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

LSI1013XT1G

S-LSI1013XT1G

S-LSI1013XT3G