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▼ Simple Drive Requirement

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▼ Small Package Outline

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▼ Surface Mount Device

G

D

S

SOT– 23 (TO–236AB)

LESHAN RADIO COMPANY, LTD.

S-LP2305DSLT1G

8V P-Channel Enhancement-Mode MOSFET

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

Improved Shoot-Through FOM

1

3

2

we declare that the material of product

compliance with RoHS

.

m

Ω

"

Vgs@-4.5V, Ids@ 3.5A = 68

m

Ω

"

Vgs@-2.5V, Ids@ 3A = 81

m

Ω

"

2A = 118

Vgs@-1.8V, Ids@

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

- 8

V

Gate-Source Voltage

± 8

Continuous Drain Current

-3.5

A

Pulsed Drain Current

1)

-12

Operating Junction and Storage Temperature Range

-55 to 150

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

re uirements

q

Device

Marking

Shipping

3000/Tape&Reel

10000/Tape&Reel

LP2305DSLT1G

P5S

LP2305DSLT3G

P5S

Total Device Dissipation FR–5 Board

P

D

1100

mW

T

Ordering Information

Symbol

Value

Unit

Rthj-a

110

℃

/W

Parameter

Thermal Data

Rev .O 1/5

1

2

3

LP2305DSLT1G

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

S-LP2305DSLT1G

S-LP2305DSLT3G