HAT1097R_15 datasheet(6/10 Pages) RENESAS

Part #	HAT1097R

Description	Silicon P Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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6 / 10 page

HAT1097R, HAT1097RJ

Rev.1.00, Feb.15.2005, page 4 of 7

Case Temperature

Tc

(

°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

–0.1 –0.3

–1

–3

–10

–30

–100

50

20

5

10

1

2

0.5

25

°C

Tc = –25

°C

75

°C

DS

V

= –10 V

Pulse Test

0.25

0.20

0.15

0.10

0.05

–40

0

40

80

120

160

0

–10 V

ID = –1, –2 A

VGS = –4.5 V

–1, –2 A

–5 A

Pulse Test

Drain Source Voltage VDS

(V)

Typical Capacitance vs.

Drain Source Voltage

Drain Current

ID (A)

Switching Characteristics

Gate Charge

Qg (nc)

Dynamic Input Characteristics

0

–10

–20

–30

–40

–50

2000

5000

1000

100

200

500

10

20

50

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

0

–20

–40

–60

–80

–100

0

–4

–8

–12

–16

8

1624

3240

–20

1000

300

30

100

3

10

1

–0.1 –0.3

–1

–3

–10

–30

–100

VGS = –10 V, VDS = –30 V

PW = 5

µs, duty < 1 %

t f

r

t

d(on)

t

d(off)

t

VDD = –10 V

–25 V

–50 V

ID = –5 A

VDS

VGS

VDD = –10 V

–25 V

–50 V

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.1 –0.3

–1

–3

–10

–30

–100

1000

500

50

100

20

10

200

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

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