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H5N3011P Datasheet(PDF) 7 Page - Renesas Technology Corp |
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H5N3011P Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 9 page  H5N3011P Rev.2.00, Aug.05.2004, page 5 of 6 0 0.4 0.8 1.2 1.6 2.0 100 40 VGS = 0 V 10 V Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 5 4 3 2 1 -25 0 50 100 150 25 125 75 0 Case Temperature Tc ( °C) Gate to Source Cutoff Voltage vs. Case Temperature VDS = 10 V Vin Monitor D.U.T. Vin 10 V R L V = 150 V DD tr td(on) Vin 90% 90% 10% 10% Vout td(off) Vout Monitor 10 Ω 90% 10% t f Switching Time Test Circuit Waveform 5 V ID = 10 mA 1 mA 0.1 mA 20 60 80 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DM P PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 0.833 °C/W, Tc = 25°C θ γ θ θ Tc = 25 °C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width |
Similar Part No. - H5N3011P_15 |
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Similar Description - H5N3011P_15 |
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