LESHAN RADIO COMPANY, LTD.

PLASTIC SOD– 323

CASE 477

1

2

LMDL301T1G

Silicon Hot–Carrier Diodes

Schottky Barrier Diode

These devices are designed primarily for high–efficiency UHF and VHF

detector applications. They are readily adaptable to many other fast switching

RF and digital applications. They are supplied in an inexpensive plastic package

for low–cost, high–volume consumer and industrial/commercial requirements.

They are available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

• Device Marking: 4T

2

ANODE

1

CATHODE

MAXIMUM RATINGS ( T

Symbol

Rating

Value

Unit

Reverse Voltage

30

Volts

THERMAL CHARACTERISTICS

Symbol

Characteristic

M a x

Unit

Total Device Dissipation FR–5 Board,*

200

mW

Derate above 25°C

1.57

mW/°C

Thermal Resistance Junction to Ambient

635

°C/W

Junction and Storage

–55 to+150

°C

Temperature Range

*FR–5 Minimum Pad

ORDERING INFORMATION

Device

Marking

Shipping

LMDL301T1G

4T

3000 / Tape & Reel

30 VOLTS SILICON

HOT–CARRIER DETECTOR

AND SWITCHING DIODES

Characteristic

Symbol

Min

Typ

M a x

Unit

Reverse Breakdown Voltage

30

—

—

Volts

µA)

Diode Capacitance

—

0.9

1.5

pF

Reverse Leakage

—

13

200

nAdc

Forward Voltage

—

0.38

0.45

Vdc

Forward Voltage

—

0.52

0.6

Vdc

•

LMDL301T3G

4T

10000 / Tape & Reel

We declare that the material of product

compliance with RoHS requirements.

Rev.O 1/3

S-LMDL301T1G

• S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable.

S-LMDL301T1G

S-LMDL301T3G