Switching Diode

LIMN10T1G

.

Device

Marking

Shipping

Device Marking Ordering Information

LESHAN RADIO COMPANY, LTD.

1

3

2

6

4

5

!Applications

Ultra high speed switching

!Features

1) Multiple diodes in one small surface mount package.

2) Diode characteristics are matched in the package.

!Construction

Silicon epitaxial planar

3) Pb Free Package is Available.

−

!

!

!

!Absolute maximum ratings

(Ta=25

°C)

∗1 Not to exceed 200mW per element.

!

!

!

!Electrical characteristics

(Ta=25

°C)

!

LIMN10T1G

LIMN10T3G

N10

3000 Tape&Reel

N10

10000 Tape&Reel

TSOP-6

Parameter

Symbol

Limits

Unit

Peak reverse voltage

80

V

DC reverse voltage

80

V

Peak forward current

300

mA

Mean rectifying current

100

mA

surge

Junction temperature

Tj

150

°C

Storage temperature

– 55 ~ +150

°C

4

A

Surge current (1us)

I

Power dissipation (total)

Pd

mW

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward voltage

–

–

1.2

V

Reverse current

–

–

0.1

µAV

Capacitance between terminals

–

3.5

pF

Reverse recovery time

–

–

4

ns

V

–

1

3

2

6

4

5

Rev.O 1/3

S-LIMN10T1G

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

S-LIMN10T1G

S-LIMN10T3G

4)