Model description and parameter extraction

AN2657

10/18

Equation 29

Figure 3.

Gate-drain charge variation vs. Vds

To extract the capacitance variables, a classic configuration has been used to measure the

Thermal node

A "thermal node" has been introduced to consider the self-heating effect (Figure 1).

The voltage between the external thermal circuit port and the source node is related to the

junction temperature rise. The current source of the circuit is equal to the dissipated power

[4] [5]. In this first model implementation we have not considered the temperature

dependent variables.

Package simulation

To include all the parasitic elements of the package in the model, several electromagnetic

simulations were performed [6].

GgxT

CGX0

1

CGXTC1

T

T

NOM

–

() CGXTC2

T

T

NOM

–

()

2

⋅

+

⋅

+

()

⋅

=

VfbT

VFB

1

VFBTC1X

T

T

NOM

–

()

⋅

+

()

⋅

=

CgdovlT

CGDOVL

1

CGDOVLTC

T

T

NOM

–

()

⋅

+

()

⋅

=