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BAS7002V Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAS7002V Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BAS70-02V-V-G www.vishay.com Vishay Semiconductors Rev. 1.1, 21-Jan-13 1 Document Number: 82393 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode MECHANICAL DATA Case: SOD-523 Weight: approx. 1.4 mg Molding compound flammability rating: UL 94 V-0 Terminals: high temperature soldering guaranteed: 260 °C/10 s at terminals Packaging codes/options: 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Space saving SOD-523 package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 22321 1 2 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAS70-02V-V-G BAS70-02V-V-G-08 Single diode .X Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 70 V Forward continuous current IF 100 mA Surge forward current IFSM 600 mA Power dissipation Ptot 150 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA 680 K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reserve breakdown voltage IR = 10 μA (pulsed) V(BR) 70 V Leakage current VR = 50 V, tp < 300 μs IR 20 100 nA Forward voltage tp < 300 μs, IF = 1.0 mA VF 410 mV tp < 300 μs, IF = 15 mA VF 1000 mV Diode capacitance VR = 0 V, f = 1 MHz CD 1.5 2 pF Reserve recovery time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 trr 5ns |
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