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DRD1830F24 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DRD1830F24 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 6 page - 3 - DRD1830F34 3/6 www.dynexsemi.com THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.02 °C/W Rth(c-h) Thermal resistance – case to heatsink Double side cooled DC - 0.005 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM -40 175 °C Tstg Storage temperature range -40 175 °C Fm Clamping force 18 26 kN CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 1500A peak, Tcase = 25°C - 1.35 V IRM Peak reverse current At VDRM, Tcase = 175°C - 150 mA QS Total stored charge IF = 2000A, dIRR/dt =10A/µs - 4500 µC Tcase = 175°C, VR =100V VTO Threshold voltage At Tvj = 175°C - 0.88 V rT Slope resistance At Tvj = 175°C - 0.20 m |
Similar Part No. - DRD1830F24 |
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