Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

1

LMUN5141T1G

CASE 419, STYLE 3

SOT–323 (SC–70)

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor. The BRT eliminates these individual components by integrating

them into a single device. The use of a BRT can reduce both system cost

and board space. The device is housed in the SC–70/SOT–323 package

which is designed for low power surface mount applications.

The modified gull–winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

202 (Note 1)

mW

310 (Note 2)

Derate above 25°C

1.6 (Note 1)

°C/W

2.5 (Note 2)

Thermal Resistance –

618 (Note 1)

°C/W

Junction-to-Ambient

403 (Note 2)

Thermal Resistance –

280 (Note 1)

°C/W

Junction-to-Lead

332 (Note 2)

Junction and Storage

–55 to +150

°C

Temperature Range

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

R

1

R

2

LESHAN RADIO COMPANY, LTD.

3

2

Rev.O 1/4

S-LMUN5141T1G

S- Prefix for Automotive and Other Applications Requiring Unique Site and

Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

•

ORDERING INFORMATION

Device

Marking

Shipping

LMUN5141T1G

3000/Tape&Reel

S-LMUN5141T1G

6U