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DRD630G60 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DRD630G60 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page DRD630G60 4/7 www.dynexsemi.com CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 1800A peak, Tcase = 25°C - 2.1 V IRM Peak reverse current At VRRM, Tcase = 150°C - 75 mA QS Total stored charge IF = 1000A, dIRR/dt =3A/µs - 3000 µC Irr Peak reverse recovery current Tcase = 150°C, VR =100V - 90 A VTO Threshold voltage At Tvj = 150°C - 0.9 V rT Slope resistance At Tvj = 150°C - 0.93 m CURVES Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves VTM EQUATION Where A = 1.249986 B = -0.17646 VTM = A + Bln (IT) + C.IT+D.IT C = 0.000524 D = 0.041024 these values are valid for Tj = 150°C for IF 500A to 2500A |
Similar Part No. - DRD630G60_15 |
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Similar Description - DRD630G60_15 |
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