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DIM250PLM33-TS000 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DIM250PLM33-TS000 Datasheet(HTML) 4 Page - Dynex Semiconductor |
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4 / 8 page  DIM250PLM33-TS000 4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 250A VGE = ±15V VCE = 1800V Rg(ON) = 10 Rg(OFF) = 10 CGE = 56nF LS ~ 150nH 2700 ns tf Fall time 520 ns EOFF Turn-off energy loss 480 mJ td(on) Turn-on delay time 1000 ns tr Rise time 400 ns EON Turn-on energy loss 320 mJ Qrr Diode reverse recovery charge IF = 250A VCE = 1800V dIF/dt = 700A/μs 180 μC Irr Diode reverse recovery current 160 A Erec Diode reverse recovery energy 165 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 250A VGE = ±15V VCE = 1800V Rg(ON) = 10 Rg(OFF) = 10 CGE = 56nF LS ~ 150nH 2750 ns tf Fall time 570 ns EOFF Turn-off energy loss 540 mJ td(on) Turn-on delay time 1020 ns tr Rise time 420 ns EON Turn-on energy loss 420 mJ Qrr Diode reverse recovery charge IF = 250A VCE = 1800V dIF/dt = 700A/μs 230 μC Irr Diode reverse recovery current 200 A Erec Diode reverse recovery energy 280 mJ Tcase = 150°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 250A VGE = ±15V VCE = 1800V Rg(ON) = 10 Rg(OFF) = 10 CGE = 56nF LS ~ 150nH 2800 ns tf Fall time 550 ns EOFF Turn-off energy loss 580 mJ td(on) Turn-on delay time 1030 ns tr Rise time 430 ns EON Turn-on energy loss 460 mJ Qrr Diode reverse recovery charge IF = 250A VCE = 1800V dIF/dt = 700A/μs 270 μC Irr Diode reverse recovery current 200 A Erec Diode reverse recovery energy 330 mJ |
Similar Part No. - DIM250PLM33-TS000_15 |
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Similar Description - DIM250PLM33-TS000_15 |
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