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DIM200PKM33-F000 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DIM200PKM33-F000 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 8 page DIM200PKM33-F000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 15 mA IGES Gate leakage current VGE = ± 20V, VCE = 0V 1 μA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 5.5 6.5 7.0 V VCE(sat) † Collector-emitter saturation voltage VGE = 15V, IC = 200A 2.8 V VGE = 15V, IC = 200A, Tj = 125°C 3.6 V IF Diode forward current DC 200 200 A IFM Diode maximum forward current tp = 1ms 400 400 A VF Diode forward voltage † (IGBT arm) IF = 200A 2.9 V Diode forward voltage ‡ (Diode arm) 3.0 V Diode forward voltage † (IGBT arm) IF = 200A, Tj = 125°C 3.0 V Diode forward voltage ‡ (Diode arm) 3.1 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 36 nF Qg Gate charge ±15V 5 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 0.45 nF LM Module inductance 40 nH RINT Internal transistor resistance 500 μ SCData Short circuit current, ISC Tj = 125°C, VCC = 1000V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L * x dI/dt IEC 60747-9 930 A Note: † Measured at the auxiliary terminals ‡ Measured at the power busbars * L is the circuit inductance + LM |
Similar Part No. - DIM200PKM33-F000_15 |
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Similar Description - DIM200PKM33-F000_15 |
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