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DIM200PHM33-F000 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # DIM200PHM33-F000
Description  Half Bridge IGBT Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM200PHM33-F000 Datasheet(HTML) 4 Page - Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 200A
VGE = ±15V
VCE = 1800V
Cge = 56nF
LS ~ 100nH
RG(ON) = 16.5
RG(OFF) = 16.5
1.95
μs
tf
Fall time
170
ns
EOFF
Turn-off energy loss
220
mJ
td(on)
Turn-on delay time
1180
ns
tr
Rise time
225
ns
EON
Turn-on energy loss
RG(ON) = 7.5,
RG(OFF) = 16.5
290
mJ
Qrr
Diode reverse recovery charge
IF = 200A
VCE = 1800V
dIF/dt = 1600A/μs
80
μC
Irr
Diode reverse recovery current
144
A
Erec
Diode reverse recovery energy
75
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 200A
VGE = ±15V
VCE = 1800V
Cge = 56nF
LS ~ 100nH
RG(ON) = 16.5
RG(OFF) = 16.5
2.2
μs
tf
Fall time
190
ns
EOFF
Turn-off energy loss
265
mJ
td(on)
Turn-on delay time
1150
ns
tr
Rise time
280
ns
EON
Turn-on energy loss
RG(ON) = 7.5,
RG(OFF) = 16.5
390
mJ
Qrr
Diode reverse recovery charge
IF = 200A
VCE = 1800V
dIF/dt = 1600A/μs
125
μC
Irr
Diode reverse recovery current
155
A
Erec
Diode reverse recovery energy
130
mJ


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