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DG408BP45 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DG408BP45 Datasheet(HTML) 7 Page - Dynex Semiconductor |
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7 / 19 page  DG408BP45 7/19 0 250 500 750 1000 1250 1500 On-state current I T - (A) 2000 1500 1000 500 0 V D = 3000V V D = 2000V V D = 1000V 2250 Conditions: T j = 25°C, IFGM = 30A, C S = 1.0µF, dI/dt = 300A/µs, dI FG/dt = 30A/µs 1750 1250 750 250 0 2040 6080 Peak forward gate current I FGM - (A) 2500 2000 1500 1000 500 Conditions: T j = 25°C, IT = 1000A, C S = 1.0µF, RS = 10 Ohms dI/dt = 300A/µs, dI FG/dt = 30A/µs V D = 3000V V D = 2000V V D = 1000V 2750 2250 1750 1250 750 Fig.8 Turn-on energy vs on-state current Fig.9 Turn-on energy vs peak forward gate current |
Similar Part No. - DG408BP45_15 |
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Similar Description - DG408BP45_15 |
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