UPD45128441G5-A10-9JF datasheet(1/92 Pages) NEC

Part #	UPD45128441G5-A10-9JF

Description	128M-bit Synchronous DRAM 4-bank, LVTTL

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1997

MOS INTEGRATED CIRCUIT

µµµµPD45128441, 45128841, 45128163

128M-bit Synchronous DRAM

4-bank, LVTTL

DATA SHEET

Document No. M12650EJBV0DS00 (11th edition)

Date Published April 2000 NS CP (K)

Printed in Japan

The mark

•

• shows major revised points.

Description

The

µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access

memories, organized as 8,388,608

× 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).

These products are packaged in 54-pin TSOP (II).

Features

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0(A13) and BA1(A12)

• Byte control (×16) by LDQM and UDQM

• Programmable Wrap sequence (Sequential / Interleave)

• Programmable burst length (1, 2, 4, 8 and full page)

• Programmable /CAS latency (2 and 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• ×4, ×8, ×16 organization

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible inputs and outputs

• 4,096 refresh cycles / 64 ms

• Burst termination by Burst stop command and Precharge command

Similar Part No. - UPD45128441G5-A10-9JF

Manufacturer	Part #	Datasheet	Description
Elpida Memory	UPD45128163-A75L	821Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL
	UPD45128163-E	932Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL
	UPD45128163-I	785Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
	UPD45128163-I-E	962Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
	UPD45128163-T	774Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

More results

Similar Description - UPD45128441G5-A10-9JF

Manufacturer	Part #	Datasheet	Description
Elpida Memory	UPD45128163-E	932Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL
	UPD45128163-A75L	821Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL
	PD45128441-T	713Kb / 89P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
	UPD45128163-I	785Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
	UPD45128163-T	774Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
	PD45128441-I	710Kb / 89P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
	PD45128163-SU	701Kb / 87P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
	UPD45128163-I-E	962Kb / 86P	128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
NEC	UPD4564323	1Mb / 84P	64M-bit Synchronous DRAM 4-bank, LVTTL
Elpida Memory	UPD4564163	919Kb / 85P	64M-bit Synchronous DRAM 4-bank, LVTTL

More results

UPD45128441G5-A10-9JF Datasheet(PDF) 1 Page - NEC

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