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2SC5752 Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # 2SC5752
Description  NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5752 Datasheet(HTML) 7 Page - Renesas Technology Corp

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Data Sheet P15658EJ1V0DS
5
2SC5752
VCE = 3.2 V
f = 0.9 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
–10
5
0
–5
10
15
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 2.8 V
f = 1.8 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
–5
10
5
015
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.2 V
f = 2.4 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
–5
10
5
015
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.2 V
f = 1.8 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
–5
10
5
015
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η


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