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2SC5751 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SC5751 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 18 page DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P15657EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) Printed in Japan © 2001 NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification •PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5751 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5751-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 50 mA Total Power Dissipation Ptot Note 205 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc. |
Similar Part No. - 2SC5751_15 |
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Similar Description - 2SC5751_15 |
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