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2SC4093 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC4093
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4093 Datasheet(HTML) 5 Page - Renesas Technology Corp

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TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
200
100
0
50
100
150
Free Air
0.1
0.5
0.2
1
2
12
5
10
20
f = 1.0 GHz
10
20
50
100
200
1
5
10
50
0.5
VCE = 10 V
5
1
0.6
2
10
20
12
5
10
20
40
VCE = 10 V
Frequency f (GHz)
MAXIMUM GAIN/INSERTION
POWER GAIN vs. FREQUENCY
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
0
10
20
30
0.1
0.2
0.5
1.0
2.0
VCE = 10 V
IC = 20 mA
|S21e|2
Gmax
0
10
20
1
0.5
2
5
10
20
50
VCE = 10 V
f = 1.0 GHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10519EJ01V0DS
3
2SC4093


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