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B160 Datasheet(PDF) 1 Page - Compact Technology Corp. |
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B160 Datasheet(HTML) 1 Page - Compact Technology Corp. |
1 / 2 page B120 thru B1200 FEATURES Metal-Semiconductor junction with guard ring Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications MECHANICAL DATA Case : JEDEC SMA molded plastic Polarity : Color band denotes cathode Weight : 0.062 grams Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 1.0 Amperes SMA Epitaxial construction CTC0074 Ver. 2.0 1 of 2 B120 thru B1200 PARAMETER SYMBOL UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current IF A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage @ 1.0A VF 0.87 0.90 V Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C Typical Junction Capacitance CJ pF Typical Thermal Resistance R JA °C/W Operating Temperature Range TJ °C Storage Temperature Range TSTG °C 1.0 IFSM 30.0 5.0 10.0 A 0.50 0.85 IR 0.5 0.2 mA -55 to +150 0.70 70 70 60 50 35 -55 to +125 All Dimensions in millimeter SMA DIM. MIN. MAX. A C D E F G H B 3.99 4.50 2.79 2.54 1.32 1.47 0.31 0.15 4.93 5.28 0.05 0.127 1.98 2.29 0.76 1.52 C B A H E F G D B1 200 B130 B1150 B1100 B180 B160 B150 B140 B120 |
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