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PA2704GR Datasheet(PDF) 4 Page - Renesas Technology Corp |
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PA2704GR Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 6 page  Preliminary Product Information G16304EJ1V0PM 2 µµµµPA2704GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 7.0 A 7 14 S Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 7.0 A 5.8 7.2 m Ω RDS(on)2 VGS = 4.5 V, ID = 7.0 A 8.5 11.2 m Ω RDS(on)3 VGS = 4.0 V, ID = 7.0 A 9.8 13.0 m Ω Input Capacitance Ciss VDS = 10 V 1200 pF Output Capacitance Coss VGS = 0 V 500 pF Reverse Transfer Capacitance Crss f = 1 MHz 160 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 7.0 A 10 ns Rise Time tr VGS = 10 V 13 ns Turn-off Delay Time td(off) RG = 10 Ω 44 ns Fall Time tf 11 ns Total Gate Charge QG VDD = 15 V 12 nC Gate to Source Charge QGS VGS = 5 V 4 nC Gate to Drain Charge QGD ID = 14 A 6 nC Body Diode Forward Voltage VF(S-D) IF = 14 A, VGS = 0 V 0.8 1.2 V Reverse Recovery Time trr IF = 14 A, VGS = 0 V 32 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs27 nC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS 0 τ = 1 µs Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10% 0 0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% |
Similar Part No. - PA2704GR_15 |
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Similar Description - PA2704GR_15 |
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