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PA1857 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # PA1857
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PA1857 Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet G15060EJ2V0DS
3
µµµµPA1857
TYPICAL CHARACTERISTICS (TA = 25°C)
5
25
50
75
100
125
150
20
40
60
80
100
120
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TA - Ambient Temperature - ˚C
0
TC - Case Temperature - ˚C
0
0
25
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
75
100
125
150
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Single Pulse
Mounted on Ceramic
Board of 50 cm x1.1 mm
2unit:
PD (FET1) : PD (FET2) = 1 : 1
2
2unit
1unit
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
0.2
0
0.8
1.0
0.4
0.6
0
4
8
12
16
4.5 V
VGS = 10 V
4.0 V
10
1
0.1
0.01
0.001
0.0001
0.00001
0
1234
100
25˚C
75˚C
VGS - Gate to Source Voltage - V
−25˚C
VDS = 10 V
FORWARD TRANSFER CHARACTERISTICS
TA = 125˚C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VDS = 10 V
ID = 1 mA
−50
50
100
0
150
1
1.5
2
2.5
3
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
1.0
VDS - Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
Single Pulse Mounted on Ceramic
Board of 50 cm x1.1 mm
PD (FET1) : PD (FET2) = 1 : 1
2
10
m
s
100
ms
DC
(1unit)
DC
(2unit)
1ms
R
DS(on)
Limited
(@V
GS
= 10
V)
ID(pulse)
ID(DC)
PW
=100
µs


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