LESHAN RADIO COMPANY, LTD.

High-Frequency Amplifier

Transistor

Features

2.Small rbb`Cc and high gain.(Typ.4ps)

3.Small NF.

S-L2SC3838LT1G

Parameter

Symbol

Value

Unit

Collector-Base Voltage

20

V

Collector-Emitter Voltage

11

V

Emitter-base voltage

3V

Collector Current

50

mA

Collector power dissipation

0.2

W

Junction temperature

150

°C

Storage temperature

-55~+150

°C

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

BV

CBO

20

--

VI

Collector-emitter breakdown voltage

BV

CEO

11

--

VI

Emitter-base breakdown voltage

BV

EBO

3

--

VI

Collector cutoff current

I

CBO

--

0.5

µAV

Emitter cutoff current

I

EBO

--

0.5

µAV

Collector-emitter saturation voltage

V

CE(sat)

--

0.5

V

I

DC current transfer ratio

h

FE

56

-

180

-

V

Transition frequency

f

T

1.4

3.2

-

GHz

V

Output capacitance

Cob

-

0.8

1.5

pF

V

Collector-base time constant

rbb`Cc

-

412

ps

V

Noise factor

NF

-

3.5

-

dB

V

I

DEVICE MARKING

L2SC3838LT1G;S-L2SC3838LT1G=AD

1

BASE

2

EMITTER

COLLECTOR

3

1

2

3

4.

ORDERING INFORMATION

Device

Package

Shipping

L2SC3838LT1G

3000/Tape & Reel

SOT-23

L2SC3838LT3G

SOT-23

10000/Tape & Reel

We declare that the material of product compliance with RoHS requirements.

SOT-23

Rev.O 1/2

L2SC3838LT1G

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

S-L2SC3838LT1G

S-L2SC3838LT3G