4707 Dey Road Liverpool, N.Y. 13088

M.S.KENNEDY CORP.

(315) 701-6751

4804

FEATURES:

Half Bridge Configuration

Silicon Carbide Mosfet Provides Ultra Fast Switching

Silicon Carbide Diode Provides Near Zero Recovery

1200V Rated Voltage

100A Continuous Output Current

Internal Zener Clamps on Gates

HI-REL Screening Available (Modified 38534)

Light Weight Domed AISiC Baseplate

Robust Mechanical Design for Hi-Rel Applications

Ultra-Low Inductance Internal Layout

Withstands 96 Hours HAST and Thermal Cycling (-55°C to +125°C)

Contact MSK for MIL-PRF-38534 (Modified) Qualification Status

MIL-PRF-38534 AND 38535 CERTIFIED FACILITY

1200V/100A

SiC HALF BRIDGE

PEM

EQUIVALENT SCHEMATIC

DESCRIPTION:

The MSK 4804 is one of a family of plastic encapsulated modules (PEM) developed specifically for use in military,

aerospace and other severe environment applications. The SiC(Silicon Carbide) technology has superior switching perfor-

mance compared to Si-Based modules. The half bridge configuration and 1200V/100A rating make it ideal for use in high

current motor drive and inverter applications. The Aluminum Silicon Carbide (AlSiC) baseplate offers superior flatness and

light weight; far better than copper or copper alloys found in most high power plastic modules. The high thermal conductiv-

ity materials used to construct the MSK 4804 allow high power outputs at elevated baseplate temperatures.

TYPICAL APPLICATIONS

1

Motor Drives

Inverters

8548-101 Rev. D 4/13