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2SJ649 Datasheet(PDF) 6 Page - Renesas Technology Corp |
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2SJ649 Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page Data Sheet D16332EJ1V0DS 4 2SJ649 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 0 –2 –3 –4 –80 –60 –40 –20 0 –1 Pulsed VGS = –10 V –5 –4.0 V –4.5 V VDS - Drain to Source Voltage - V Pulsed –1 –2 –3 –4 –5 VDS = –10 V –10 –1 –0.1 –100 –0.01 TA = −55˚C 25˚C 75˚C 125˚C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = –10 V ID = –1 mA –1.0 –2.0 –3.0 –50 0 50 100 0 150 –4.0 Tch - Channel Temperature - °C –0.01 –0.1 –1 10 100 –10 –100 0.1 1 Pulsed VDS = –10 V TA = 125˚C 75˚C 25˚C −55˚C 0.01 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE –1 –0.1 120 100 80 60 40 20 0 –10 –100 Pulsed VGS = –4.0 V –4.5 V –10 V ID - Drain Current - A 0 10 20 30 40 50 60 70 80 0 - 2 - 4 - 6 - 8 - 10 - 12 - 14 - 16 - 18 - 20 Pulsed ID = −10 A VGS - Gate to Source Voltage - V |
Similar Part No. - 2SJ649_15 |
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Similar Description - 2SJ649_15 |
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