1

Low Noise GaAs MMIC Amplifier

3.5 - 7.0 GHz

Rev. V7

MAAM37000-A1

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• Low Noise Figure: 2.2 dB Typical

• High Gain: 17 dB Typical

• Gain Flatness: +0.5 dB

• Single Supply: +4 V

• No External Components Required

• DC Decoupled RF Input and Output

• Lead-Free 8-Lead Ceramic Package

• RoHS* Compliant and 260°C Reflow Compatible

Description

The MAAM37000-A1 is a wide-band, low noise,

MMIC amplifier housed in a small, lead-free, 8-lead

ceramic package. It includes two integrated gain

stages and employs series inductive feedback to

obtain excellent noise figure and a good, 50 Ω, input

and output impedance match over the entire

frequency band.

The MAAM37000-A1 operates

from a single +4 V supply. It is fully monolithic,

requires no external components, and is provided in

a user-friendly, microwave package.

The MAAM37000-A1 performs well as a low noise

amplifier in receive applications and as a driver or

buffer amplifier where high gain, excellent linearity

and low power consumption are important. Because

of its wide bandwidth, the MAAM37000-A1 can be

used in numerous commercial and government

system applications, such as TVRO, VSAT, missile

guidance and radar.

The MAAM37000-A1 is manufactured in-house

using a reliable, 0.5-micron, GaAs MESFET

process. This product is 100% RF tested to ensure

compliance to performance specifications.

Ordering Information

Part Number

Package

MAAM37000-A1

8-lead Ceramic (CR-3)

MAAM37000-A1G

Gull Wing (CR-10)

2. Exceeding any one or combination of these limits may cause

permanent damage to this device.

3. M/A-COM Technology does not recommend sustained

operation near these survivability limits.

4. Typical thermal resistance (

Parameter

Absolute Maximum

+7 V

Input Power

+20 dBm

Current

150 mA

Channel Temperature

+150°C

-55°C to +100°C

Storage Temperature

-65°C to +150°C

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

Functional Schematic

Pin No.

Function

Pin No.

Function

1

Ground

5

Ground

2

Ground

6

RF Output

3

RF Input

7

Ground

4

Ground

8

1. The package bottom must be connected to RF and DC

ground.