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©

1998, 1999

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

D13805EJ3V0DS00 (3rd edition)

Date Published

May 2001 NS CP(K)

Printed in Japan

The mark 5

5

5

5 shows major revised points.

DESCRIPTION

The

µPA1815 is a switching device which can be

driven directly by a 2.5-V power source.

The

µPA1815 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

• Can be driven by a 2.5-V power source

• Low on-state resistance

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1815GR-9JG

Power TSSOP8

Drain to Source Voltage

–20

V

Gate to Source Voltage

±12

V

Drain Current (DC)

±7

A

Drain Current (pulse)

Note1

±26

A

Total Power Dissipation

Note2

2.0

W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 5000 mm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit : mm)

14

85

6.4 ±0.2

4.4 ±0.1

1.0 ±0.2

0.1

1, 5, 8

: Drain

2, 3, 6, 7: Source

4

: Gate

0.8 MAX.

3.15 ±0.15

3.0 ±0.1

0.65

0.10 M

0.27

+0.03

–0.08

0.25

0.5

3

–3

°

0.6

+0.15

–0.1

1.2 MAX.

0.1±0.05

1.0±0.05

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain