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DCR1020N50 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR1020N50 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 10 page SEMICONDUCTOR DCR1020N52 6/10 www.dynexsemi.com Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 55.0 0.001 0.01 0.1 1 10 100 Time ( s ) Zth Double Side Cooled Zth Cathode Side Cooled Zth Anode Side Cooled 1 2 3 4 Double side cooled Ri (°C/kW) 3.4733 4.9047 9.1463 4.5220 Ti (s) 0.1457 0.0166 1.2832 0.3767 Anode side cooled Ri (°C/kW) 7.6674 5.0530 9.7355 27.5992 Ti (s) 0.2241 0.0169 4.0566 8.2780 Cathode side cooled Ri (°C/kW) 6.0393 4.2782 5.1301 25.0874 Ti (s) 0.1356 0.0143 0.6594 7.2358 )] / exp( 1 ( [ 4 1 i i i i th T T R Z R th(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Anode Side Cooling Cathode Sided Cooling Z th (z) Z th (z) Z th (z) ° sine. rect. ° sine. rect. ° sine. rect. 180 3.03 2.07 180 3.03 2.07 180 3.12 2.12 120 3.49 2.95 120 3.49 2.95 120 3.61 3.04 90 3.99 3.43 90 3.99 3.43 90 4.13 3.54 60 4.43 3.94 60 4.43 3.94 60 4.60 4.08 30 4.77 4.49 30 4.76 4.48 30 4.96 4.66 15 4.92 4.77 15 4.92 4.77 15 5.13 4.97 )] / exp( 1 ( [ 4 1 i i i i th T T R Z |
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